MOSFET 1
Drive the gate relative to its own source. Join both drain contacts for this channel.
Two separate N-channel MOSFETs in one SO-8, each with its own gate, source and pair of drain leads.
Gate. Drive with the rated voltage relative to its own source.
| Pin | Signal | Direction | Function |
|---|---|---|---|
| 1 | S1 Current terminal | Current terminal | Source. It sets the gate-voltage reference and is the intrinsic diode anode. |
| 2 | G1 Input | Input | Gate. Drive with the rated voltage relative to its own source. |
| 3 | S2 Current terminal | Current terminal | Source. It sets the gate-voltage reference and is the intrinsic diode anode. |
| 4 | G2 Input | Input | Gate. Drive with the rated voltage relative to its own source. |
| 5 | D2 Current terminal | Current terminal | Drain. It connects to the switched load and is the intrinsic diode cathode. |
| 6 | D2 Current terminal | Current terminal | Drain. It connects to the switched load and is the intrinsic diode cathode. |
| 7 | D1 Current terminal | Current terminal | Drain. It connects to the switched load and is the intrinsic diode cathode. |
| 8 | D1 Current terminal | Current terminal | Drain. It connects to the switched load and is the intrinsic diode cathode. |
| Parameter | Limit | Conditions and source |
|---|---|---|
| Drain-to-source voltage20 V | 20 V | Absolute maximum with the gate off. Allow margin for supply and switching transients. International Rectifier IRF7311PbF, Absolute Maximum Ratings |
| Gate-to-source voltage±12 V | ±12 V | Absolute maximum. Gate drive in this example is 5 V. International Rectifier IRF7311PbF, Absolute Maximum Ratings |
| Maximum on-resistance29 mΩ | 29 mΩ | At VGS = 4.5 V. See the data sheet for drain-current and junction-temperature conditions. International Rectifier IRF7311PbF, Electrical Characteristics |
International Rectifier / Infineon pinout and electrical figures. Check the manufacturer before applying them to second-source parts.