N-channel switch
With the source on the return and the drain on the load, a positive gate-to-source voltage turns on the channel.
A single N-channel MOSFET whose SO-8 leadframe provides multiple source and drain terminals.
Source. It sets the gate-voltage reference and is the intrinsic diode anode.
| Pin | Signal | Direction | Function |
|---|---|---|---|
| 1 | S Current terminal | Current terminal | Source. It sets the gate-voltage reference and is the intrinsic diode anode. |
| 2 | S Current terminal | Current terminal | Source. It sets the gate-voltage reference and is the intrinsic diode anode. |
| 3 | S Current terminal | Current terminal | Source. It sets the gate-voltage reference and is the intrinsic diode anode. |
| 4 | G Input | Input | Gate. Drive with the rated voltage relative to its own source. |
| 5 | D Current terminal | Current terminal | Drain. It connects to the switched load and is the intrinsic diode cathode. |
| 6 | D Current terminal | Current terminal | Drain. It connects to the switched load and is the intrinsic diode cathode. |
| 7 | D Current terminal | Current terminal | Drain. It connects to the switched load and is the intrinsic diode cathode. |
| 8 | D Current terminal | Current terminal | Drain. It connects to the switched load and is the intrinsic diode cathode. |
| Parameter | Limit | Conditions and source |
|---|---|---|
| Drain-to-source voltage30 V | 30 V | Absolute maximum with the gate off. Allow margin for supply and switching transients. International Rectifier IRF7413PbF, Absolute Maximum Ratings |
| Gate-to-source voltage±20 V | ±20 V | Absolute maximum. Gate drive in this example is 5 V. International Rectifier IRF7413PbF, Absolute Maximum Ratings |
| Maximum on-resistance18 mΩ | 18 mΩ | At VGS = 4.5 V, ID = 3.7 A and TJ = 25 °C. At 10 V gate drive the limit is 11 mΩ at 7.3 A. International Rectifier IRF7413PbF, Electrical Characteristics |
Single-channel SO-8. Join the three source leads and the four drain leads in the layout.